Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy

نویسندگان

  • Peng Xu
  • Matthew L. Ackerman
  • Steven D. Barber
  • James K. Schoelz
  • Dejun Qi
  • Paul M. Thibado
  • Virginia D. Wheeler
  • Luke O. Nyakiti
  • Rachael L. Myers-Ward
  • Charles R. Eddy
  • D. Kurt Gaskill
چکیده

Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to 5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a 100 200 nm area. # 2013 The Japan Society of Applied Physics

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تاریخ انتشار 2013